FDP18N50
Manufacturer:
On Semiconductor
Mfr.Part #:
FDP18N50
Datasheet:
Description:
MOSFETs TO-220AB-3 Through Hole N-Channel number of channels:1 235 W 500 V Continuous Drain Current (ID):18 A 60 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 500 V |
| Length | 10.1 mm |
| Width | 4.7 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 265 MΩ |
| Height | 9.4 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Voltage | 500 V |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current | 18 A |
| Current Rating | 18 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 235 W |
| Power Dissipation | 235 W |
| Threshold Voltage | 5 V |
| Number of Channels | 1 |
| Input capacitance | 2.86 nF |
| Continuous Drain Current (ID) | 18 A |
| Rds On Max | 265 mΩ |
| Drain to Source Voltage (Vdss) | 500 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 55 ns |
| Turn-Off Delay Time | 95 ns |
| Element Configuration | Single |
| Fall Time | 90 ns |
| Rise Time | 165 ns |
| Gate Charge | 60 nC |
| Drain to Source Resistance | 265 mΩ |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 500 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 3 V |
Stock: 268
Distributors
pcbx
pcbxUnit Price$2.68973
Ext.Price$2.68973
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.68973 | $2.68973 |
| 10 | $2.32934 | $23.29340 |
| 25 | $2.09407 | $52.35175 |
| 50 | $1.88256 | $94.12800 |
| 100 | $1.66801 | $166.80100 |
| 300 | $1.61438 | $484.31400 |
| 500 | $1.56248 | $781.24000 |
| 1000 | $1.51650 | $1516.50000 |